Terahertz Pulse Emission from Semiconductor Heterostructures Caused by Ballistic Photocurrents
نویسندگان
چکیده
Terahertz radiation pulses emitted after exciting semiconductor heterostructures by femtosecond optical were used to determine the electron energy band offsets between different constituent materials. It has been shown that when photon is sufficient enough excite electrons in narrower bandgap layer with an greater than conduction offset, terahertz pulse changes its polarity. Theoretical analysis performed both analytically and numerical Monte Carlo simulation polarity inversion caused are excited narrow energies surmount offset wide substrate. This effect evaluate GaInAs/InP GaInAsBi/InP heterostructures.
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ژورنال
عنوان ژورنال: Sensors
سال: 2021
ISSN: ['1424-8220']
DOI: https://doi.org/10.3390/s21124067